• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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    • 专利摘要:

    公开号:NL1035999A1
    申请号:NL1035999
    申请日:2008-09-30
    公开日:2009-04-03
    发明作者:Heine Melle Mulder；Joost Cyrillus Lambert Hageman；Roland Johannes Wilhelmus Stas
    申请人:Asml Netherlands Bv；
    IPC主号:
    专利说明:

    Lithographic Apparatus and Method
    FIELD
    The present invention relates to a lithographic apparatus and a device manufacturing method. BACKGROUND A lithographic apparatus is a machine that applies a desired pattern to a target portion or a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (eg included part of, one or several dies) on a substrate (eg a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the beam in a given direction (the "scanning" direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
    Known lithographic apparatuses have an illumination system which provides imaging offering σ <1, where σ is a ratio between the numerical aperture of the illumination system that illuminates the patterning device pattern with the beam of radiation, and the numerical aperture of a projection system that projects the image of the patterning device on the resist layer.
    The illumination system has a pupil, which is a Fourier transform of the object plane in which the patterning device or the lithographic apparatus is located. The pupil plane of the illumination system is conjugate to a pupil plane of the projection system. An illumination mode can be described by reference to the spatial distribution of intensity of a radiation beam in the pupil plane of the illumination system. It will be understood that the spatial distribution of intensity in the pupil plane of the projection system will generally be the same as the distribution of intensity in the pupil plane of the illumination system, subject to diffraction effects which may be caused by a pattern of the patterning device.
    SUMMARY
    It is desirable, for example, for there to be a mechanism and method to allow measurement of the pupil of an illumination system providing imaging with σ> 1.
    According to an aspect of the present invention, there is provided a lithographic apparatus including: an illumination system configured to condition a beam of radiation; a support structure configured to hold a reticle, the reticle having a pinhole; a substrate table configured to hold a substrate; a projection system configured to project a beam onto the substrate table, the numerical aperture of the illumination system is larger than the numerical aperture of the projection system; and a radiation redirection device configured to re-direct σ> 1 components of the beam of radiation to within the numerical aperture of the projection system.
    According to an aspect of the present invention, there is provided a method including: providing a beam of radiation using an illumination system; projecting the beam of radiation through a projection system, involving the numerical aperture of the projection system is equal to or less than the numerical aperture of the illumination system; positioning a reticle, having a pinhole, between the illumination system and the projection system; and redirecting radiation such that σ> 1 components of the beam of radiation are able to pass within the numerical aperture of the projection system.
    The method may further include using a sensor to sense the projection system pupil, communicating the sensed pupil to a processor, and using the processor to reconstruct a representation of the pupil of the illumination system.
    LETTER DESCRIPTION OF THE DRAWINGS
    Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
    Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; Figure 2a, 2b and 2c are schematic drawings showing the diffraction orders collected by the projection system;
    Figure 3 is a schematic drawing of an apparatus according to an embodiment of the invention;
    Figures 4a and 4b are schematic drawings of an apparatus according to an embodiment of the invention;
    Figure 5 is a schematic drawing of an aerial view of an illumination system pupil having σ> 1 components;
    Figure 6 is a schematic drawing of an aerial view of an apparatus according to an embodiment of the invention;
    Figure 7 is a schematic elevation drawing of the apparatus of Figure 6;
    Figure 8 is a schematic drawing of an apparatus according to an embodiment of the invention;
    Figure 9 is a schematic drawing of an apparatus according to an embodiment of the invention;
    Figure 10 is a schematic drawing of an aerial view of a pupil having σ> 1 components; and Figure 11 is a schematic drawing of an apparatus according to an embodiment of the invention.
    DETAILED DESCRIPTION
    Although specific reference maybe made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms "wafer" or "that" may be considered as synonymous with the more general terms "substrate" or "target portion", respectively. The substrate referred to may be processed, before or after exposure, in for example a track (a tool that typically applies to a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so the term substrate used may also refer to a substrate that already contains multiple processed layers.
    The terms "radiation" and "beam" used include and compass all types of electromagnetic radiation, including ultraviolet (UV) radiation (eg having a wavelength of 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (eg having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
    The term "patterning device" used should be broadly interpreted as referring to a device that can be used to impart a radiation beam with a pattern in its cross-section such as creating a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit. A patterning device may be transmissive or reflective. Examples of patterning device include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions; in this manner, the reflected beam is patterned.
    The support structure holds the patterning device. It holds the patterning device in a way depending on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is a hero in a vacuum environment. The support can use mechanical clamping, vacuum, or other clamping techniques, for example electrostatic clamping under vacuum conditions. The support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms "reticle" or "mask" may be considered synonymous with the more general term "patterning device".
    The term "projection system" used should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term "projection lens" may also be considered as synonymous with the more general term "projection system".
    The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing shaping, or controlling the beam of radiation, and such components may also be referred to below, collectively or singularly, as a "lens ".
    The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more support structures). In such "multiple stage" machines the additional tables and / or support structures may be used in parallel, or preparatory steps may be carried out on one or more tables and / or support structures while one or more other tables and / or support structures are being used for exposure.
    The lithographic apparatus may also be of a type bearing the substrate is immersed in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. Liquid immersion may be applied to other spaces in the lithographic apparatus, for example, between the mask and the first element of the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
    Figure 1 schematically depicts a lithographic apparatus according to a particular embodiment of the invention. The apparatus comprises: an illumination system (illuminator) IL to condition a beam PB or radiation (e.g. UV radiation); a support structure (e.g., a mask table) MT to support a patterning device (e.g., a mask) MA and connected to first positioning device PM to accurately position the patterning device with respect to item PL; a substrate table (e.g., a wafer table) WT to hold a substrate (e.g., a resist-coated wafer) W and connected to second positioning device PW to accurately position the substrate with respect to item PL; and a projection system (e.g. a refractive projection lens) PL configured to image a pattern beamed to the radiation beam PB by patterning device MA onto a target portion C (e.g. including one or more dies) or the substrate W.
    As here depicted, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array or a type as referred to above).
    The illuminator IL receives a beam of radiation from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to be part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including for example suitable directing mirrors and / or a beam expander. In other cases the source may be an integral part of the apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, maybe referred to as a radiation system.
    The illuminator IL may include adjusting means AM configured to adjust the angular intensity distribution of the beam. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) or the intensity distribution in a pupil plane or the illuminator can be adjusted. In addition, the illuminator IL generally comprises various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation PB, having a desired uniformity and intensity distribution in its cross-section.
    The radiation beam PB is an incident on the patterning device (e.g., mask) MA, which is a hero on the support structure MT. Having traversed the patterning device MA, the beam PB passes through the projection system PL, which is the beam onto a target portion C or the substrate W. With the aid of the second positioning device PW and position sensor IF (eg an interferometric device) , the substrate table WT can be moved accurately, eg so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device MA with respect to the path of the beam PB, eg after mechanical retrieval from a mask library, or during a scan. In general, movement of the object tables MT and WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the positioning device PM and PW. However, in the case of a stepper (as opposed to a scanner) the support structure MT may be connected to a short stroke actuator only, or may be fixed. Patterning device MA and substrate May be aligned using patterning device alignment marks M1, M2 and substrate alignment marks P1, P2.
    The depicted apparatus can be used in the following preferred modes: 1. In step mode, the support structure MT and the substrate table WT are kept essentially stationary, while an entire pattern is imparted to the beam PB is projected onto a target portion C in one go (ie a single static exposure). The substrate table WT is then shifted in the X and / or Y direction so that a different target portion can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In scan mode, the support structure MT and the substrate table WT are scanned synchronously while a pattern is transmitted to the beam PB is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT is determined by the (de-) magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) or the target portion in a single dynamic exposure, whereas the length of the scanning motion has the height (in the scanning direction) of the target portion. 3. In another mode, the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern is imparted to the beam PB is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array or a type as referred to above.
    Combinations and / or variations on the modes described above or use or entirely different modes or use may also be employed.
    For imaging offering σ <1, a property of the pupil formed by a projection system on a substrate may be measured using a pinhole reticle and a sensor positioned in front or behind the image plane in a substrate table. Similarly, a property of the pupil of an illumination system projected by a σ <1 system may be measured using a pinhole reticle and a sensor positioned in front or behind the image plane.
    It can be advantageous and desirable to use imaging which offers σ> 1. For example, dark field imaging may improve the resolution, the Mask Error Enhancement Factor (MEEF) and the proximity bias effects or lithographic apparatus. Such imaging which offers σ> 1 uses illumination originating from regions in the pupil of the illumination system corresponding to regions outside the numerical aperture of the projection system, i.e. originating from points in the illumination pupil with a normalized radial coordinate σ> 1.
    The maximum numerical aperture or illumination radiation is defined by:
    where NAm is the numerical aperture of the illumination system and NAproj is the numerical aperture of the projection system. However, the projection system may include some demagnification, Magproj. For example, for a Magproj = 0.25, the NA at patterning device level is XA or the NA at substrate level. A system providing imaging offering σ> 1 such as, for example, a system suitable to provide dark field illumination, is characterized by NAjn max> NAproj. That is, the numerical aperture NAproj or the projection system is narrower than the numerical aperture NAm max of the illumination system. The σ> 1 components of illumination are offered at the patterning device level at angles which are unable to pass the numerical aperture and consequently cannot be measured in the same way as σ <1 components, ie using a pinhole reticle and a sensor positioned in the substrate table.
    Referring to Figure 2a in combination with Figure 1, the illuminator IL provides a radiation beam PB which illuminates a patterning device MA along the optical axis of the projection system PL. The beam PB is diffracted at angles by the patterning device MA in accordance with the spatial frequency components of the pattern of the patterning device. In Figure 2a the zero order and +/- 1 orders of the diffracted beam are shown being projected into the projection system PL. However, as will be appreciated, in practice there are an infinite number of orders from the diffracted beam.
    Referring to Figure 2b, resolution and depth of focus can be improved where the axis of illumination (ie axis of the beam PB) is not parallel with the optical axis of the projection system PL such that is the zero order and -1 order radiation projected towards the peripheral regions of the projection system PL. This is known as off-axis illumination.
    Referring to Figure 2c, where the axis of illumination is equally more acute relative to the patterning device the zero order radiation is projected outside the image plane, such that only the higher order, in this example the -1 and -2 orders, radiation is able to be collected by the projection system PL. The zero order is not collected as it is projected outside the numerical aperture, therefore σ> 1. This is known as dark field imaging.
    An embodiment of the present invention is concerned with measuring one or more properties of the pupil of the illumination system for imaging systems where σ> 1.
    Referring to Figure 3, apparatus 10, according to an embodiment of the invention, configured to measure one or more properties of the illumination system pupil is shown. The apparatus 10 comprises a reticle 12 having a pinhole 14. In use, the pinhole 14 is positioned in the object plane 16 or the projection system. The apparatus 10 further comprises a negative lens 18 (such as a plano-concave lens or a double concave lens), disposed above the reticle 12. Referring also to Figure 1, in use, in order to measure the illumination system pupil, the pinhole reticle 12 is placed on the support structure MT used to hold the patterning device MA. It will be appreciated that although this embodiment is described in relation to a single pinhole and associated negative lens, the apparatus may include a variety of such pinholes and associated negative lenses.
    In use, a beam 20, illuminates the pinhole reticle 12, through the lens 18. The beam is incident on the lens 18. The beam 20 is refracted by the lens 18 such components of the illumination system pupil which would normally be projected outside the numerical aperture of the projection system PL as indicated by 21 are redirected such that they are projected within the boundary of the numerical aperture of the projection system PL, as indicated by 23, and are able to be captured by the projection system PL. Therefore, in other words, the lens 18 is operable as a radiation ray redirector which redirects radiation rays, which would otherwise be projected outside the numerical aperture, such that they are projected within the boundary of the numerical aperture for collection by the projection system PL .
    The pupil of the projection system PL contains the σ <1 and σ> 1 components of the beam and one or more properties collected in the form of an image using a sensor in the substrate table WT. The image is then processed, the function of the lens 18 is reversed and an image of the illumination system pupil including the σ> 1 components is reconstructed from which one or more properties of the illumination pupil can be determined. This is desirably carried out using a sensor SE positioned in the substrate table WT, which senses the pupil or the projected radiation beam. The sensed pupil is electronically communicated to a processor PR which reconstructs a representation of the illumination system pupil including the σ> 1 components from which one or more properties of the illumination system pupil can be determined. The positions of the sensor SE and processor PR are shown in Figure 1.
    Referring to Figure 4a, apparatus 100, according to an embodiment of the invention, is depicted. Apparatus 100 has a reticle 112 having a pinhole 114. The pinhole 114 is positioned on the object plane 116 or the projection system PL. Referring also to Figure 1, in use, in order to measure the illumination system pupil, the pinhole reticle 112 is placed on the support structure MT. A positive lens 118 is disposed below the reticle 112 and spaced apart therefrom such that, in use, the radiation rays pass through the peripheral regions of the lens 118. This is advantageous otherwise the radiation rays would pass through the center of the lens 118 and the lens would have no effect on them. The lens 118 should be spaced apart from the reticle 112 by no more than 5 mm.
    Figure 4b shows an arrangement of the embodiment of apparatus 100, in which the lens 118 is not spaced apart from the reticle 112 but instead forms forms of the reticle 112.
    It will be appreciated that although this embodiment is described in relation to a single pinhole and associated positive lens, the apparatus may include a variety of such pinholes and associated positive lenses.
    In use, a beam 120, illuminates the pinhole reticle 112. The beam 120 is an incident on the reticle 112 and rays project through the pinhole 114 into the lens 118.
    118 the radiation rays are refracted such that components of the illumination system pupil that would normally be projected outside the numerical aperture of the projection system PL as indicated by 121 are redirected such that they are projected within the boundary of the numerical aperture of the projection system PL, as indicated by 123, and are able to be captured by the projection system PL. Therefore, in other words, the lens 118 is operable as a radiation ray redirector which redirects radiation rays, which would otherwise be projected outside the numerical aperture, such that they are projected within the boundary of the numerical aperture for collection by the projection system PL .
    The pupil of the projection system PL contains the σ <1 and σ> 1 components of the beam and one or more properties collected in the form of an image using a sensor in the substrate table WT. The image is then processed, the function of the lens 118 is reversed and an image of the illumination pupil including the σ> 1 components is reconstructed from which one or more properties of the illumination pupil can be determined. This is desirably carried out using a sensor SE positioned in the substrate table WT, which senses the pupil or the projected radiation beam. The sensed pupil is electronically communicated to a processor PR which reconstructs a representation of the illumination system pupil including the σ> 1 components from which one or more properties of the illumination system pupil can be determined. The positions of the sensor SE and processor PR are shown in Figure 1.
    Referring to Figure 5, an aerial view of a pupil 322 of the illumination system having σ> 1 components is shown. The σ> 1 component account for the annular shaded region 324 which extends radially outwards beyond the numerical aperture boundary 326. In order for a true representation of the illumination system pupil 322 (including the σ> 1 components) to be accepted into the projection system PL (see Figure 1) the σ> 1 components are shifted into the region radially inwards or the numerical aperture boundary 326. As discussed above, this may be done using lenses 18, 118.
    Referring to Figures 6 and 7, apparatus 310, according to an embodiment of the invention, is shown. The apparatus 310 comprises a reticle 312 having eight pinholes 314. Each pinhole 314 represents an equal segment of the annular shaded area of the illumination system pupil 322 representing components of the beam as shown in Figure 5. The apparatus 310 further comprises eight optical wedges 328 , each wedge corresponding to one of the pinholes 314. For the benefit of simplicity only one of the pinholes 314 and associated wedges 328 is shown in Figure 7. However, it will be appreciated that each of the other pinholes and wedges function in a similar manner.
    In use, each segment representing a component of the beam is shifted radially inward by refraction of the beam through the respective wedge 328 and through the respective pinhole 314 such that the σ> 1 components of the beam are accepted within the numerical aperture of the projection system PL, ie geometric telecentricity is applied to the illumination system pupil.
    In the same manner as described above with respect to Figures 3 and 4, the pupil of the projection system PL contains the σ <1 and σ> 1 components of the beam and one or more properties being collected in the form of an image using a sensor in the substrate table WT. The image is then processed, the geometric telecentricity is reversed and an image of the illumination pupil including the σ> 1 components is reconstructed from which one or more properties of the illumination pupil can be determined. This is desirably carried out using a sensor SE positioned in the substrate table WT, which senses the pupil or the projected radiation beam. The sensed pupil is electronically communicated to a processor PR which reconstructs a representation of the illumination system pupil including the σ> 1 components from which one or more properties of the illumination system pupil can be determined. The positions of the sensor SE and processor PR are shown in Figure 1. Referring to Figure 8, an apparatus 410, according to an embodiment of the invention, is shown. Apparatus 410 is a variation of apparatus 310 the wedges are disposed on the underside of the reticle 412. In this embodiment the geometric telecentricity is applied to rays below the pinhole 414. The illumination system pupil has been reconstructed using a sensor in the substrate table WT as described in the preceding paragraph in relation to apparatus 310. Referring to Figure 9, apparatus 510, according to an embodiment of the invention, is depicted. Apparatus 510 comprises a reticle 512 having a pinhole 514. The apparatus 510 further comprises a diffractive grating 530 which is positioned to cover the pinhole 514. Figure 10 shows an aerial view of an illumination system pupil 522 having σ> 1 components. The σ> 1 components account for the annular shaded region 524 which extends radially outwards beyond the numerical aperture boundary 526. In order for a representation of the illumination system pupil 522 (including the σ> 1 components) to be accepted into the projection system PL (see Figure 1) the σ> 1 components should be shifted into the region radially inwards or the numerical aperture boundary 526.
    In use, the grating 530 is oriented such that first order 532 + 1 and 532.1 of the beam incident thereon is shifted radially inwards within the numerical aperture boundary 526. The grating 530 is then successively rotated, relative to the axis of the radiation beam, where for each angle of orientation the order is shifted inwards within the numerical aperture boundary 526, such that the σ> 1 components are able to pass through the numerical aperture of the projection system PL.
    In addition to or alternatively to having a grating 530 which is capable of being sdccessively rotated, the reticle 512 may have a variety of pinholes 514, each pinhole having a grating 530 oriented differently such that each of the desired angles of orientation can be achieved. As previously discussed, the pupil of the projection system PL contains the σ <1 and σ> 1 components of the beam and one or more properties collected in the form of an image using a sensor in the substrate table WT. The image is then processed, with an image of the illumination system pupil including the σ> 1 components has been reconstructed from which one or more properties of the illumination pupil can be determined. This is desirably carried out using a sensor SE positioned in the substrate table WT, which senses the pupil or the projected radiation beam. The sensed pupil is electronically communicated to a processor PR which reconstructs a representation of the illumination system pupil including the σ> 1 components from which one or more properties of the illumination system pupil can be determined. The positions of the sensor SE and processor PR are shown in Figure 1. Referring to Figure 11, apparatus 610, according to an embodiment of the invention, is shown. Apparatus 610 comprises a reticle 612 having a pinhole 614 and magnifying optics 634 positioned above the pinhole 614. The magnifying optics 614 are positioned to reduce the angles of the radiation rays 636 (derived from the beam) such that they are within the numerical aperture boundary of the projection system PL and are therefore able to pass therethrough. Returns, σ <1 and σ> 1 components of the beam are able to contribute to the projection process.
    It will be appreciated that although this embodiment is described in relation to a single pinhole and associated magnifying optics, the apparatus may alternatively include a variety of such pinholes and associated magnifying optics.
    The magnified pupil of the projection system PL is corrected such that an image of the illumination system pupil including the σ> 1 components has been reconstructed, from which one or more properties of the illumination system pupil can be determined. This is desirably carried out using a sensor SE positioned in the substrate table WT, which senses the pupil or the projected radiation beam. The sensed pupil is electronically communicated to a processor PR which reconstructs a representation of the illumination system pupil including the σ> 1 components from which one or more properties of the illumination system pupil can be determined. The positions of the sensor SE and processor PR are shown in Figure 1.
    In the illustrated embodiment of the invention, the sensor SE is shown in Figure 1 as being provided as part of the substrate table. Flowever, it is not essential that the sensor SE is provided in the substrate table. It may be provided in any other suitable location, for example in an independently moveable actuator provided in the lithographic apparatus.
    One or more aspects of one or more further may be, where appropriate, combined with, added to or substituted for one or more aspects of one or more other exp. While specific expired or the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention. Other aspects of the invention are set out as in the following numbered clauses: 1. A lithographic apparatus including: an illumination system configured to condition a beam of radiation; a support structure configured to hold a reticle, the reticle having a pinhole; a substrate table configured to hold a substrate; a projection system configured to project a beam onto the substrate table, the numerical aperture of the illumination system is larger than the numerical aperture of the projection system; and a radiation redirection device configured to re-direct σ> 1 components of the beam of radiation to within the numerical aperture of the projection system. 2. The apparatus of clause 1, where the reticle is positioned between the illumination system and the projection system. 3. The apparatus of clause 2, where the radiation redirection device comprises a negative lens positioned to overlie the pinhole. 4. The apparatus of clause 2, where the negative lens is attached to the reticle. 5. The apparatus of clause 2, where the radiation redirection device comprises a positive lens positioned to underlie the pinhole. 6. The apparatus of clause 2, the reticle has more than one pinhole and the radiation redirection device comprises a transmissive wedge to redirect the σ> 1 components of the beam of radiation to within the numerical aperture of the projection system. 7. The apparatus of clause 6, where the transmissive wedge is positioned to overlie an associated pinhole. 8. The apparatus of clause 7, the transmissive wedge is positioned underlie an associated pinhole. 9. The apparatus of clause 2, the radiation redirection device comprises a diffractive grating. 10. The apparatus of clause 9, where the reticle comprises a variety of pinholes, each pinhole having an associated diffractive grating, one or more of the diffractive gratings are positioned in a different orientation relative to the other diffractive gratings. 11. The apparatus of clause 9, where the diffractive grating is positioned to cover the pinhole. 12. The apparatus of clause 10, the diffractive grating is rotatable relative to an axis or the beam of radiation. 13. The apparatus of clause 11, where the reticle comprises a variety of pinholes, each pinhole having an associated diffractive grating, one or more of the diffractive gratings are positioned in a different orientation relative to the other diffractive gratings. 14. The apparatus of clause 2, including a magnifier disposed to over the pinhole. 15. The apparatus of clause 1, further including a sensor located after the projection system and a processor, the sensor being arranged to sense a projection system pupil and communicate the projection system pupil to the processor, the processor being arranged to reconstruct a representation of the illumination system pupil. 16. A method including: providing a beam of radiation using an illumination system; projecting the beam of radiation through a projection system, involving the numerical aperture of the projection system is equal to or less than the numerical aperture of the illumination system; positioning a reticle, having a pinhole, between the illumination system and the projection system; and redirecting radiation such that σ> 1 components of the beam of radiation are able to pass within the numerical aperture of the projection system. 17. The method of clause 16, including redirecting radiation using a negative lens overlying the pinhole. 18. The method of clause 16, including redirecting radiation using a positive lens underlying the pinhole. 19. The method of clause 16, the reticle has more than one pinhole and including redirecting radiation using a transmissive wedge suitably positioned to redirect the σ> 1 components of the beam of radiation to within the numerical aperture of the projection system. 20. The method of clause 19, where the transmissive wedge overlies an associated pinhole. 21. The method of clause 16, including redirecting radiation using a diffractive grating suitably positioned to redirect the σ> 1 components of the beam of radiation to within the numerical aperture of the projection system. 22. The method of clause 21, including successively rotating the diffractive grating relative to an axis of the radiation beam, shifting for each angle of orientation a diffraction order of the radiation beam is shifted inwards within the numerical aperture boundary such that σ> 1 components or the beam of radiation are able to pass through the numerical aperture of the projection system. 23. The method of clause 16, redirecting radiation comprises magnifying. 24. The method of clause 16, comprising using a sensor to sense the pupil of the radiation beam, communicating the sensed pupil to a processor, and using the processor to reconstruct a representation of the illumination system pupil.
    权利要求:
    Claims (1)
    [1]
    A lithography apparatus comprising: - an exposure device adapted to provide a radiation beam; - a carrier constructed for wearing a mask, the mask comprising a small opening; - a substrate table constructed for supporting a substrate; - a projection system adapted for projecting the radiation beam onto the substrate table, wherein the numerical aperture of the exposure device is larger than the numerical aperture of the projection system; and - a radiation deflecting device which deflects radiation from the radiation beam with a sigma greater than 1 within the numerical aperture of the projection system.
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    法律状态:
    2009-06-02| AD1A| A request for search or an international type search has been filed|
    优先权:
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    US97698907P| true| 2007-10-02|2007-10-02|
    US97698907|2007-10-02|
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